Part Number Hot Search : 
EMC2103 090814 U3709 MB675XXX ALVCH16 0263003 SG588 SKKE15
Product Description
Full Text Search
 

To Download TIP3055 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3PN package Complement to type TIP2955 90 W at 25C case temperature 15 A continuous collector current APPLICATIONS Designed for general-purpose switching and amplifier applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
TIP3055
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
Collector-base voltage

PARAMETER
INC
Collector-emitter voltage
Emitter-base voltage
ANG H
E SEM
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 100 60 7 15 7
UNIT V V V A A W ae ae
Open collector
Collector current
Base current Collector power dissipation Junction temperature Storage temperature TC=25ae
90 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.39 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=30mA ;IB=0 IC=4A; IB=0.4A IC=10A ;IB=3.3A IC=4A ; VCE=4V VCE=30V; IB=0 VCE=70Vdc;RBE=100Ohm VCE=100Vdc,VBE(off)=1.5Vdc VEB=7V; IC=0 IC=4A ; VCE=4V MIN 60
TIP3055
SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICER ICEV IEBO hFE-1 hFE-2 Is/b fT
TYP.
MAX
UNIT V
1.1 3.0 1.5 0.7 1.0 5.0 5.0 70
V V V mA mA mA mA
DC current gain

Second breakdown collector current With base forward biased
INC
Transition frequency
E SEM ANG H
IC=10A ; VCE=4V
VCE=30Vdc,t=1.0s, Nonrepetitive
OND IC
TOR UC
20 5.0 3.0 2.5
A MHz
IC=0.5A ; VCE=10V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
TIP3055

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP3055

CHA IN
E SEM NG
OND IC
TOR UC
4


▲Up To Search▲   

 
Price & Availability of TIP3055

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X